tlp831(f) 2007-10-01 1 toshiba photointerrupter in frared led + phototransistor tlp831(f) lead(pb)-free home electronics equipment such as vcrs and cd players oa equipment such as copiers, printers, and facsimiles automatic servicing equipment various position detection sensor the tlp831(f) photointerrupter consists of a high radiant power gaas infrared led and a si phototransistor. housed in a short lead package, this device is ideal for automatic mounting. ? printed wiring board direct mounting type (with a locating pin) ? short lead type enabling automatic mounting : lead length 3.4 0.3mm ? board thickness: 1.6mm or less ? gap: 4.2mm ? resolution: slit width 0.5mm ? high current transfer ratio: i c / i f = 5% (min) ? high response speed: t r , t f = 15 s (typ.) ? detector side is of visible light cut type. ? material of the package : polybutylene terephthalate (ul94v ? 0, black color) toshiba ? weight: 0.58 g (typ.)
tlp831(f) 2007-10-01 2 absolute maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma forward current derating (ta > 25c) i f / c ? 0.33 ma / c led reverse voltage v r 5 v collector ? emitter voltage v ceo 35 v emitter ?collector voltage v eco 5 v collector power dissipation p c 75 mw collector power dissipation derating (ta > 25c) p c / c ? 1 mw / c detector collector current i c 50 ma operating temperature t opr ?30~85 c storage temperature t stg ?40~100 c soldering temperature (5 s) (note 1) t sol 260 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: at the location of 1.5mm from the resin package bottom product indication operating ranges characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f D D 25 ma operating temperature t opr ?10 D 75 c monthly production lot production year (last digit of a.d. is indicated) production month (jan.-dec. are indicated by alphabets of a-l)
tlp831(f) 2007-10-01 3 opto electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 10ma 1.00 1.15 1.30 v reverse current i r v r = 5v D D 10 a led peak emission wavelength p i f = 10ma D 940 D nm dark current i d (i ceo ) v ce = 24v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D 870 D nm current transfer ratio i c / i f v ce = 2v, i f = 10ma 5 D 100 % collector ?emitter saturation voltage v ce (sat) i f = 20ma, i c = 0.5ma D 0.1 0.35 v rise time t r D 15 50 coupled fall time t f v cc = 5v, i c = 1ma r l = 1k ? (note 2) D 15 50 s note 2: switching time measurement circuit and waveform precautions ? when removing flux with chemicals after soldering, clea n only the leads on the soldering side; do not dip the whole package for cleaning. chemicals remaining on a surface of le d or phototransistor, if any, would have a bad influence to the optical characteristics and it may severely lower the conversion efficiency. ? the environment to install the device should be determ ined carefully. oil or chem icals may cause the package to be dissolved or cracked. ? the device should be mounted on an unwrapped surface. ? install this device as avoiding the disturbance light as possible. a visible light cut ? off type phototransistor which blocks light with frequencies of 700nm or above is used. however, the device cannot block infrared light with a wavelength of 700nm or more, and it may do mistaken movements. ? conversion efficiency falls over time due to the current which flow s in the infrared led. when designing a circuit, take into account this change in conversion efficiency over time. the ratio of fluctuation in conversi on efficiency to fluctuation in in frared led optical output is 1:1. v out v cc i f r l 10% 90% i f v out t f t r t s t d (0) o p (t) o p (0) f i / c i (t) f i / c i =
tlp831(f) 2007-10-01 4 outline: toshiba unit: mm weight: 0.58 g (typ.) pin connection 1. anode 2. cathode 3. collector 4. emitte r 2 1 4 3
tlp831(f) 2007-10-01 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 20 40 60 80 100 20 40 60 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 80 0 0 20 40 60 80 100 20 40 60 i c ? i f forward current i f (ma) collector current i c (ma) 1 3 5 10 30 50 100 10 0.1 0.3 0.5 1 3 5 ta = 25 c v ce = 2 v v ce = 0.4 v sample 1 sample 2 i c ? v ce (typ.) collector-emitter voltage v ce (v) collector current i c (ma) 20 6 0 0 2 4 6 8 10 2 3 4 5 1 12 i f = 5 ma 10 15 ta = 25 c i f ? v f (typ.) forward voltage v f (v) forward current i f (ma) 0 50 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 3 5 10 30 ta=75c 50 25 ? 25 i c /i f ? i f forward current i f (ma) current transfer ratio i c /i f (%) 100 1 3 5 10 30 50 100 3 5 10 30 50 ta = 25 c v ce = 2 v v ce = 0.4 v sample 2 sample 1
tlp831(f) 2007-10-01 6 switching characteristics (non saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) 0.1 30 0.3 0.5 1 3 5 10 0.5 3 5 10 30 50 100 300 0.3 50 1 500 t r, t f t d t s ta = 25 c v cc = 5 v v out = 1 v i d (i ceo ) ? ta (typ.) ambient temperature ta (c) dark current i d (i ceo ) ( a) 5 10 ? 4 0 20 40 60 80 100 120 10 ? 3 10 ? 2 10 ? 1 1 v ce = 24v 10 5 relative i c ? ta (typ.) ambient temperature ta (c) relative collector current 1.2 0.2 ? 40 ? 20 0 20 40 60 80 100 0.4 0.6 0.8 1.0 v ce = 2 v i f = 20 ma i f = 10 ma i f = 5 ma v ce(sat) ? ta (typ.) ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.20 0 ? 40 ? 20 0 20 40 60 80 100 0.04 0.08 0.12 0.16 i c = 0.5 ma i f = 20 ma 1 300 3 5 10 30 50 100 5 30 50 100 300 500 1000 3000 3 10 switching characteristics (saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) ta = 25 c i f = 20 ma v cc = 5 v v out 4.65 v t r t s t f t d
tlp831(f) 2007-10-01 7 1.2 0 ? 3 1.0 0.8 0.6 0.4 0.2 ? 2 ? 1 0 1 2 3 4 i f = 10 ma v ce = 2 v ta = 25 c detecting position characteristics(1) (typ.) distance d (mm) relative collector current ? + 0 d shutte r 1.2 0 4 1.0 0.8 0.6 0.4 0.2 5 6 7 8 9 10 11 detecting position characteristics (2) (typ.) distance d (mm) relative collector current i f = 10 ma v ce = 2 v ta = 25 c shutte r d
tlp831(f) 2007-10-01 8 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? gaas(gallium arsenide) is used in this product. the dus t or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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